Esd protection device

ABSTRACT

A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as vertical device and having top and bottom opposing contacts.

FIELD

The present invention relates to an ESD protection device. In particularit relates to high data rate interconnection comprising such aprotection device.

BACKGROUND

Electrical surges such as electrical overstress or electrostaticdischarge (ESD) transient pulses are common causes of damage toelectronic devices. To protect against such transient surges electronicdevices are conventionally protected by surge or ESD protection devices.One type of protection device is the so called Transient voltagesuppression (TVS) device.

TVS devices provide protection against electrical overstress orelectrostatic discharges and are commonly used in portable/consumerelectronic devices such as personal computers, audio and video equipmentor mobile telephones. According to the International ElectrotechnicalCommission standard IEC 61000-4-2 such devices should be protectedagainst system level ESD stresses.

Where protection is required at a system level, for example in aportable electronic device such as a smart phone or tablet computer ESDprotection, devices must be adequately protected in accordance with theIEC standards whilst not hampering normal operation of the device. Inapplications with high speed interfaces such as Universal Serial Bus(USB) and High Definition Multimedia Interface (HDMI) it is necessarythat ESD devices have low device capacitance so that signal integrity ismaintained. Such ESD devices also require a low clamping voltage inorder to protect internal circuitry.

The requirement of low clamping voltage is related to the gate oxidethickness utilised in integrated circuits and devices used in electronicapplications. The gate oxide is the dielectric layer that separates thegate terminal of a MOSFET from the underlying source and drain terminalsas well as the conductive channel that connects source and drain whenthe transistor is turned on. Gate oxide is formed by oxidizing thesilicon of the channel to form a thin (5-200 nm) insulating layer ofsilicon dioxide.

A conductive gate material is subsequently deposited over the gate oxideto form the transistor. As device and integrated circuit miniaturizationcontinues the gate oxide thickness must be reduced accordingly. Thisreduction of gate oxide thickness can reduce the breakdown voltage ofthe device or IC.

By having a low clamping voltage it is possible to ensure that the gateoxide breakdown voltage is not exceeded. That is, it is possible to setthe clamping voltage at an appropriate level to ensure that it does notexceed the gate oxide breakdown voltage. Typically the clamping voltageis set such that it is equal to the maximum voltage drop across theprotection device during an ESD or overstress event.

The requirement of low capacitance is related to the high data transferrates. If the capacitance of the ESD protection device connected to thehigh data transfer lines is too high the signal may be distorted anddata transfer may be reduced or prevented.

Commonly, diodes such as zener diodes are used to provide surge oroverstress protection. Whilst such diodes are easy to manufacture andprovide a cost effective protection against surge or overstress theyhave a high capacitance typically in the range of one to several hundredPico-farads. Due their high capacitance zener diodes are thereforeunsuitable to high data rate applications.

So-called silicon controlled rectifiers (SCR) may also be used foron-chip protection however they are not used as discrete protection.Typically the ESD robustness is very different depending on the requiredapplication. Normally an internal (or on-chip) ESD protection onlyprotects against overstress events during manufacturing. Discreteprotection on the other hand protects devices during operation of asystem, such as a HDMI or USB data transfer line. Furthermore SCRs usedfor surge protection in on-chip or integrated circuit (IC) applicationsare lateral devices of the type shown in FIG. 1, with contacts solely onthe top of the device. Such arrangements are therefore not suitable forstandard discrete packages such as SOD882 for example. Specifically,standard discrete packages are generally miniaturised and a lateraldevice with two top terminal contacts may be very difficult to assemblefor a comparable miniaturised form factor.

It is an object of the present invention to provide an ESD protectiondevice which solves or mitigates some or all of the above mentionedproblems.

SUMMARY

The invention is set out in the claims.

A semiconductor ESD protection device comprises a vertical arrangementof alternating conductivity type layers, wherein the layers are arrangedas silicon controlled rectifier and wherein the silicon controlledrectifier is arranged as vertical device and having top and bottomopposing contacts.

The ESD protection device therefore has vertical current flow betweenthe opposing top and bottom contacts thereby making it compatible withthe existing standard discrete packages.

In addition the ESD protection device achieves very high ESD robustnesswith a low capacitance. For example the ESD robustness may be 15 kV witha capacitance of 0.3-0.4 pico-farads.

DESCRIPTION OF THE DRAWINGS

The invention is described further hereinafter by way of example onlywith reference to the accompanying drawings in which:

FIG. 1 is a schematic of a known lateral ESD device;

FIG. 2 a is an equivalent circuit of an ESD device

FIG. 2 b is a schematic cross-section of an ESD device arranged as avertical device;

FIG. 2 c is an IV characteristic of the vertical ESD device of FIG. 2 b;

FIG. 3 a illustrates a meshed emitter arrangement for the ESD device ofFIG. 2 b;

FIG. 3 b illustrates a ring emitter arrangement for the ESD device ofFIG. 2 b;

FIG. 3 c illustrates a finger emitter arrangement for the ESD device ofFIG. 2 b;

FIG. 4 a is an equivalent circuit of an ESD device and parallel diode;

FIG. 4 b is a schematic cross-section of an ESD device and paralleldiode;

FIG. 5 a illustrates an ESD device with side wall trench isolation;

FIG. 5 b illustrates an ESD device with side wall mesa structureisolation;

FIG. 6 shows a simulated transient line pulse IV characteristic of anESD device;

FIG. 7 shows the simulated maximum lattice temperature for varioussystem level ESD pulses;

FIG. 8 illustrates a wire bond connection arrangement for an ESD device;

FIG. 9 illustrates a front interconnect structure metal on a mesa ESDdevice;

FIG. 10 illustrates an n-doped poly-silicon trench connection for andESD device;

FIG. 11 illustrates a through silicon via connection for and ESD device;

FIG. 12 shows a doping profile for an ESD device;

FIG. 13 illustrates an alternative arrangement for an ESD device

FIG. 14 a illustrates an alternative arrangement for an ESD device

FIG. 14 b is an equivalent circuit of an ESD device

FIG. 14 c illustrates an alternative arrangement for an ESD device

FIG. 14 d illustrates an alternative arrangement for an ESD device

FIG. 15 shows a simulated transient line pulse IV characteristic of anESD device;

FIG. 16 illustrates an ESD device with side wall mesa structureisolation;

In the figures and the following description like reference numeralsrefer to like features.

The equivalent of circuit of the ESD protection device 10 is shown inFIG. 2 a. In overview the ESD protection device 10 may comprise an anodeterminal A and a cathode terminal C. The ESD protection device 10 mayeffectively be regarded as a PNP transistor 12 connected to an NPNtransistor 14. In this way the ESD protection device 10 may be regardedas a silicon controlled rectifier (SCR).

Typically in an known SCR device arrangements all regions are connectedexternally. A base terminal and an emitter terminal of the PNPtransistor 12, and a collector terminal of the NPN transistor may beshort circuited by the anode terminal A of the ESD protection device 10.

In addition, a collector terminal of the NPN transistor 14 may beconnected to the base terminal of the PNP transistor 12. The emitterterminal of the NPN transistor may form the cathode terminal C of theESD protection device 10. R_(A), may represent the spreading resistanceof the collector of the PNP transistor 12 which may be formed by ann-type layer, known as an n-well, as discussed below. Typically, in usethe anode terminal A may be connected to the I/O line or device to beprotected and the cathode terminal C will be connected to ground asdiscussed in more detail below. For example in the case of HDMI or USBprotection, the ESD protection device 10 may be used as a bypass path toground on the data lines. When an ESD event occurs, the ESD protectiondevice 10 will turn on and the current is shunted to ground.

Referring now to FIG. 2 b for example, the general structuralarrangement of the ESD protection device 10 will be described. Inoverview, the ESD protection device 10 may be regarded as fourvertically arranged p-n-p-n layers to form a vertically arranged SCRmade up of a PNP transistor 12 and a NPN transistor 14. In this regardcertain layers of the vertically arranged p-n-p-n layers may be sharedbetween the PNP and NPN transistors.

The cathode terminal C of the ESD protection device 10, which mayeffectively be the emitter terminal of the NPN transistor 14, is formedby an appropriate ohmic contact to a substrate 16 and an epitaxial (orepi) overlayer 18 provided on the substrate 16. The substrate may be aheavily doped N+ silicon substrate and the overlayer 18 may be a lightlydoped N-type epitaxial overlayer. The epitaxial overlayer 18 may beintrinsically or lightly doped, thereby minimising device capacitance.The epitaxial overlayer 18 may be required to prevent implantation intothe heavily doped substrate. Implanting into the substrate may cause thejunction capacitance to be too high. Since the overlayer 18 is lightlydoped this may results in a wide depletion region and low junctioncapacitance.

A p-type layer 20 may form the base of the NPN transistor 14. The p-typelayer 20 may be shared with the collector of the PNP transistor 12. Thep-type layer may be formed in the N-type epitaxial overlayer 18 by deepimplantation, for example an implantation step followed by a diffusionstep. The p-type layer 20 may be formed as a p-well in the epitaxialoverlayer 18. An n-type layer 22 may form the collector of the NPNtransistor 14. The n-type layer 22 may be shared with the base of thePNP transistor 12 and may be formed as n-well in the p-well layer 20.The n-type layer 22 may be formed by shallow implantation and diffusioninto the p-type layer 20.

A further p-type layer 24 may form the emitter of the PNP transistor 12.The p-type layer 24 may be formed by shallow implantation and diffusioninto the n-type layer 22. As discussed above in relation to FIG. 2 aboth the base, formed by n-type layer 22, and an emitter, may be formedby p-type layer 24 of the PNP transistor 12, may be short circuited,that is connected by the same contact, in this case by the anodeterminal A of the ESD protection device 10. The anode terminal A may beany appropriate ohmic contact.

FIGS. 3 a, 3 b and 3 c show various examples of anode arrangements. Aswith the arrangement described above in relation to FIG. 2 b the generalstructure may be the same and this may be seen by comparing thestructures of each of FIGS. 3 a, 3 b and 3 c with the general structureof FIG. 2 b. It may be seen they are broadly similar from the substrate18 up to the n-well layer 22. The general difference in each case ofFIGS. 3 a, 3 b and 3 c being the arrangement of anodes.

Specifically, with reference to FIG. 3 a a plurality of the furtherp-type layers 24 may arranged as a mesh in a regular n×m array, wherebyn is the number of rows and m is the number of columns in the array, toform the emitter of the PNP transistor 12. The array of further p-typelayers 24 may arranged evenly in the n-type layer 22 forming the base ofthe PNP transistor 12.

As with the arrangement of FIG. 2 b, the anode terminal A (notillustrated here) which may be any appropriate ohmic contact. The anodeterminal may be arranged such that it short circuits the plurality ofthe further p-type layers 24 forming the emitter and also the n-typelayer 22 forming the base of the PNP transistor 12 of the ESD protectiondevice. In the arrangement of FIG. 3 a the n×m array is 3×5 array.However, the skilled person will understand that any number of positiveinteger value rows or columns may be used as required by the specificapplication.

In the example shown in FIG. 3 c, the array may be a 1×4 array. For thisarrangement it is possible to tailor the spreading resistance R_(w) inaccordance with a specific application. In the examples of FIGS. 3 a and3 c the further p-type layers 24 may be substantially rectangularcuboid.

With reference to FIG. 3 b, the plurality of the further p-type layers24 may be arranged as a series of concentric rings around a centralp-type layer 24′. As with the arrangement of FIGS. 2 b, 3 a and 3 c, theanode terminal A (not illustrated here) may be any appropriate ohmiccontact and may be arranged such that it may short circuit the pluralityof the further p-type layers 24 and central p-type 24′ layer formingemitter, and the n-type layer 22 forming the base of the PNP transistor12 of the ESD protection device 10. Typically, the p-type layer 20,forming the base of the NPN transistor 14 and the collector of the PNPtransistor 12, may have a radius of around 42 μm. The N-well, or then-type layer 22 forming the base of the PNP transistor 12, may have aradius of 35 μm. The further p-type layers 24 may each have a width of 3μm, where the distance between each of the further p-type layers 24 maybe 3 μm. The distance between the central p-type layer 24′ and the nextadjacent p-type layer 24 may be 3 μm. The skilled person will understandthat the dimensions presented here are given merely as an example toillustrate the general arrangement of the layers.

Each of the further p-type layers 24, 24′ arrangements of FIGS. 3 a, 3 band 3 c may be such that the spreading resistance R_(w) of the n-typelayer 22 forming the base of the PNP transistor 12 (that is the N-wellresistance of the PNP transistor) is chosen such that R_(w) is adaptedto the relevant application. The depth of the further p-type layersdetermines the spreading resistance R_(w).

As an alternative to the anode arrangements described, the doping of then-type layer 22 forming the base of the PNP transistor 12 may beincreased. The ESD protection device 10 may be may be used as an ESDprotection device having a low clamping voltage. As mentioned above, theanode A of the ESD protection device 10 may be connected to an I/O lineof a high data rate connection and the cathode C of the ESD protectiondevice is connected to ground as illustrated in FIG. 4 a.

In the event of a positive ESD event, the ESD protection device 10 willbe triggered and the ESD current will be shunted through the ESDprotection device. The specifics of how the ESD protection device istriggered will be discussed in more detail below. For negative ESDevents an additional current path may be required. In this case, asillustrated in FIG. 4 a, a diode D may be connected in parallel acrossthe ESD protection device 10. A cathode of the diode D is connected toan anode of the ESD protection device 10 and a cathode C of the ESDprotection device is connected to an anode of the diode D. In the waythe diode may be considered to be connected in the forward direction tothe ESD protection device 10.

The diode D may be a discrete component separate from but connected tothe ESD protection device 10. Alternatively, the diode may bemonolithically integrated with the ESD protection device. In this regardmonolithic integration may be considered as two devices, in this examplethe diode D and the ESD protection device 10 sharing the same substrate16.

An arrangement for integrating a forward connected parallel diode D withthe vertical type ESD protection device 10 as discussed above isillustrated in FIG. 4 b. Comparing FIG. 2 a (or FIG. 5 a or FIG. 5 b)with FIG. 4 b, like reference numerals correspond to like features. TheESD protection device 10, is integrated with a diode D. As illustratedin FIG. 4 b line X-X notionally divides the ESD protection device 10from the diode D. Both the diode D and the ESD protection device 10 areformed on the substrate 16. As mentioned above, the ESD protectiondevice 10 is a vertical device, however in this example the diode D is alateral type device.

Following the circuit diagram of FIG. 4 a, the anode A of the ESDprotection device 10 is connected to the cathode C′ of the diode D. Thisconnection may be achieved by using an appropriate metal contact suchthat the anode A and the cathode C′ are a common contact to both the ESDprotection device 10 and the diode D. The anode A′ of the diode D isconnected to the cathode C of the ESD protection device 10 by way of ametallic contact and a low ohmic connection 26, for example an deep N+diffusion layer, to the substrate 16. The low ohmic connection may be adeep N-type diffusion region.

This arrangement ensures that whilst a lateral diode D has been used asa shunt for a reverse ESD current, the ESD protection device retains avertical structure by having top and bottom anode A and cathode Cterminals respectively, that connect to the respective anodes andcathodes of the ESD protection device 10 and diode D as illustratedschematically in FIG. 4 a.

With reference again to FIG. 4 b, it can be seen that the anode A of theESD protection device 10 and the cathode of the diode D may be formed asa single contact. The contact may be formed of any appropriate metal, orcombination of metals as understood by those skilled in the art. Thecathode C′ of the diode connects to an appropriate N-type 28 layer, forexample an N+ layer and the anode A′ of the diode is connected to anappropriate P-type layer 30, for example a heavily doped P+ layer. Therespective N-type 28 and P-type 30 layers form the p-n junction of thediode D. As with the ESD protection device, a lightly doped epitaxialoverlayer 18 may be provided to reduce the junction capacitance of thelateral diode D. Isolation layers are required to electrically isolatethe ESD protection device 10 from the diode D, more specifically n-typelayer 28 is isolated from the substrate 16.

Isolation may be achieved by appropriate isolation layers 32, 34. Inthis regard trench isolation layer 32, may be combined with a deepimplant region 34 to create the required isolation. The isolation layermay be of the same conductivity type, in this example a heavily doped P+region. The isolation layer may further serve to isolate the diode Dfrom the substrate 16 and the low ohmic region 26, and thus avoid ashort circuit of the diode to the cathode C.

Alternative arrangements to the low ohmic connection for example an deepN+ diffusion layer 26 may be used to make the connection of the anode Aof the ESD protection device 10 to the cathode C′ of the diode D. FIG. 8illustrates a wire bond 50 arrangement to a leadframe 52 onto which thecathode C of the ESD protection device 10 is connected. Similarly, asshown in FIG. 10 an appropriate metal contact 54 or track may be formedon one edge of the ESD protection device 10 down to the substrate 16. Inthis example the edge profile the ESD protection device is a mesastructure, although any appropriate edge profile may be used.

In the example of FIG. 9, the connection may be made using an n-typedoped poly-silicon filled trench 56 connecting the substrate 16.Similarly, a through silicon via arrangement 58 may be used asillustrated in FIG. 11.

The arrangements of FIGS. 5 a and 5 b are configured so as to cooperatewith the integrated diode D. As illustrated in FIG. 5 a, the ESDprotection device 10 may also include additional vertical trenches 40arranged at either edge of the device 10. The vertical trenches mayextend vertically from the top of the device through the entire depth ofthe n-type layer 22 forming the base of the PNP transistor 12, throughthe entire depth of the p-type layer 20, forming the base of the NPNtransistor 14 and the collector of the PNP transistor 12, through theentire depth the overlayer 18 and partially into the substrate 16. Thevertical trenches may be filled with a suitable insulating material suchas silicon dioxide, SiO₂. The purpose of the trenches is isolate the ESDprotection device 10 from the edge of the device die and the integratedlateral diode D to reduce or eliminate further parasitic capacitanceeffects in the ESD protection device 10 by reducing or eliminatingso-called junction side wall capacitance and limiting the breakdown orclamping voltage of the device would which may be too high in case ofnegative ESD stress.

As an alternative to the arrangement of FIG. 5 b, the junction side wallcapacitance may be eliminated by employing a mesa type structure 40′ orthe ESD protection device 10. In providing such a structure, the ESDprotection device is isolated from the sawing lane by the insulatinglayer on the mesa sidewall (not shown in the picture). In the case ofFIG. 5 b free space terminates the sawing lane.

As discussed above, the arrangement of n-type layer 22 forming the baseof the PNP transistor 12 and further p-type layers 24, making up theanode region of the ESD protection device may ensure that the ESDprotection device 10 does not trigger until an ESD event occurs. Thetriggering current of the ESD protection device may be in the range 900mA to 1000 mA.

Each of the arrangements described above may typically result in reduceddevice capacitance. Specifically, it may be reduced junction capacitancethus making the ESD protection device 10 suitable for ESD protection onhigh data rate lines, such as for example HDMI, USB 3.0 or other highdata rate applications. As a result of the low device capacitance theESD protection device 10 may also be suitable for protecting antennafrom ESD events.

In operation the ESD protection device operates as an SCR in the forwarddirection. This is due to the fact that the base of the PNP transistor12 is floating.

In operation, and as mentioned briefly above, the ESD protection 10device may protect an I/O line by connecting the anode A to the I/O lineand the cathode C to ground. If a positive ESD current occurs on the I/Oline, the ESD protection device will be triggered (with reference toFIG. 6) as follows.

Once the base collector junction of the NPN transistor 12 breaks down acurrent flows via R_(w) and then over a base-emitter junction of the PNPtransistor 14 which is forward biased. If the current is sufficientlyhigh the base emitter junction of PNP transistor 12 is forward biasedand the PNP transistor is turned on. In the end both transistors areturned on since each of them supplies the other transistor with thenecessary base current.

Since the ESD protection device 10 may be regarded as an SCR, when apositive ESD event occurs (that is a positive voltage is applied betweenthe anode A and the cathode C), the ESD protection device 10 mayinitially, that is at currents lower than the currents need to triggerthe SCR behaviour, behave like an NPN transistor, such that no currentwill flow due to the emitter-base junction being reversed biased. Thisis known as reverse blocking mode. When the voltage ESD voltage, that isthe applied voltage between the anode A and cathode C reaches theemitter-collector breakdown voltage of the NPN, typically a few voltshigher than the operation voltage of the application the ESD current maythen flow from the anode A through the n-type layer (or n-well) 22 tothe cathode C of the ESD protection device 10 where the NPN transistor14 turns on. As mentioned above the n-well has an associated resistanceR_(w) represents the spreading resistance of the collector of the NPNtransistor 14 and the base of the PNP transistor 12. As the ESD currentfurther increases the voltage drop across the n-well resistance R_(w)becomes large enough to forward bias the emitter-base junction of thePNP transistor 12.

Once both the PNP and the NPN are turned on, the regenerative process,namely the collector current of one transistor is the base current ofthe other and vice versa, starts to trigger the SCR, which finally leadsthe ESD protection device 10 to enter the low voltage on-state asillustrated by FIG. 2 c.

Under reverse-bias the behaviour of the SCR is determined by theopen-base NPN transistor 12.

With reference to FIG. 6, the simulated quasi-static IV at 100 nstransmission line pulse was observed for a ESD protection device 10Under these simulation conditions, the ESD protection device turned onat approximately 10V, following which the voltage rises, as the currentrises, to approximately 1 A. Here the current is seen to flow throughthe n-well region 22 and almost no, or very little current, flowsthrough the P+ region. For a current above 1 A the snapback may beobserved where the voltage across the anode A and cathode C of the ESDprotection device drops rapidly to approximately 2 V. At this point thePNP transistor 12 of the ESD protection device 10 turns on and the ESDcurrent predominantly flows through the p-type layers 24.

As a result of the snap-back observed in the IV curve of FIG. 6, theclamping voltage of the device is improved compared to open basetransistors or diodes. For a current of 12 A the clamping voltage isapproximately 4 V.

The ESD robustness of the ESD protection device 10 may be observed inFIG. 7. FIG. 7 is a transient electro-thermal simulation where systemlevel ESD pulses were applied and simulated maximum local latticetemperatures (or maximum crystal temperature in the device) during thesystem level pulse were observed. It can be seen that the maximumlattice temperature inside the device even during a 30 kV system levelpulse is approximately 1024 K, which is still far below the meltingtemperature of the for example silicon material which may be used tofabricate the ESD protection device. Taking silicon as an example theESD robustness of the device may therefore be above 30 kV, whilst thedevice capacitance between 0.5 and 0.6 pf.

Known SCRs are only applied in lateral situation such as in ICs whichare only able to survive 2 kV human body model pulses.

Due to the vertical arrangement of the device it may be used in standardpackage types where contact to the back-side of the ESD protectiondevice is required allowing it to be used in standard small signalpackage types.

FIG. 12 shows the doping profile of the ESD protection device.

Whilst the above discussion relates to the ESD protection device formedon an n-type substrate, based on the above discussion, the skilledperson will now understand that it is also possible realise the ESDprotection device on a p-type substrate 16′ as illustrated in FIG. 13.For such an arrangement, the conductivity type of the doping regionsdiscussed above would be reversed. One advantage of this arrangement isthat the anode will be on the backside of the device, such that amonolithic multichannel data line protection can be realised.

Referring now to FIG. 14 a an alternative ESD protection arrangement, tothat presented above will be discussed. The main differences between thealternative arrangement and those presented above are the metallic(ohmic connection between DN and DP) and the trigger implant such thatthere are no floating terminals.

The trigger implant is included so that the trigger voltage issufficiently low (5-10V). Without trigger implant the device wouldconduct current at about 50-100V.

The DN is again the low ohmic connection from surface to substrate. TheDP serves as an isolation layer so that the electric field from SN doesnot touch DN. This would give a poor electrical behaviour (very round IVcurves, high leakage currents). The diode in this arrangement is formedby the layers SN to DP.

With reference to FIG. 15, the simulated quasi-static IV curve for 100ns transmission line pulses (TLP) was observed. Under these simulationconditions, the ESD protection device 10 turned on at approximately 10V,following which the voltage rises, as the current rises, toapproximately 1 A. Here the current is seen to flow through the n-wellregion 22 and almost no, or very little current, flows through the P+region. For a current above 1 A the snapback may be observed where thevoltage across the anode A and cathode C of the ESD protection devicedrops rapidly to approximately 2 V. At this point the PNP transistor 12of the ESD protection device 10 turns on and the ESD currentpredominantly flows through the p-type layers 24.

As a result of the snap-back observed in the IV curve of FIG. 15, theclamping voltage of the device is improved over known SCRs. For acurrent of 12 A which means that the device survives 8 kV system levelpulse, the clamping voltage is approximately 9 V.

The capacitance of the vertical SCR can be further reduced by thefollowing arrangements. Using a p-type epitaxial layer for capacitancereduction and integration of additional signal lines on the device. Inwhich case the capacitance would come from SN to p-type epitaxial layerwhere this area is smaller than the area formed by DP, BP and n-typeepitaxial layer.

The mesa structure as shown in FIG. 16 can also be used to eliminate thejunction sidewall capacitance on n-type epitaxial layer. Sidewallcapacitance is capacitance coming from the vertical part of thediffusion regions. If a diffusion region is diffused 4 μm deepadditional capacitance would result at the side of the region as well asat its bottom. As typically no current flows at the side, only at thebottom they are unwanted. They are creating only parasitic capacitancesand have no use.

Particular and preferred aspects of the invention are set out in theaccompanying independent claims. Combinations of features from thedependent and/or independent claims may be combined as appropriate andnot merely as set out in the claims.

The scope of the present disclosure includes any novel feature orcombination of features disclosed therein either explicitly orimplicitly or any generalisation thereof irrespective of whether or notit relates to the claimed invention or mitigate against any or all ofthe problems addressed by the present invention. The applicant herebygives notice that new claims may be formulated to such features duringprosecution of this application or of any such further applicationderived there from. In particular, with reference to the appendedclaims, features from dependent claims may be combined with those of theindependent claims and features from respective independent claims maybe combined in any appropriate manner and not merely in specificcombinations enumerated in the claims.

Features which are described in the context of separate embodiments mayalso be provided in combination in a single embodiment. Conversely,various features which are, for brevity, described in the context of asingle embodiment, may also be provided separately or in any suitablesub combination.

Term “comprising” does not exclude other elements or steps, the term “a”or “an” does not exclude a plurality. Reference signs in the claimsshall not be construed as limiting the scope of the claims.

1. A semiconductor ESD protection device comprising a verticalarrangement of alternating conductivity type layers, wherein the layersare arranged as silicon controlled rectifier and wherein the siliconcontrolled rectifier is arranged as vertical device and having top andbottom opposing contacts.
 2. The semiconductor ESD protection device ofclaim 1, wherein the vertically arranged silicon controlled rectifier ismade up of a first and a second transistor.
 3. The semiconductor ESDprotection device of claim 2, wherein the first transistor is ofopposite conductivity type to the second transistor.
 4. Thesemiconductor ESD protection device of claim 3 wherein the firsttransistor is a PNP transistor 12 and the second transistor is a NPNtransistor.
 5. The semiconductor ESD protection device of claim 3wherein the first transistor is a NPN transistor and the secondtransistor is a PNP transistor.
 6. The semiconductor ESD protectiondevice of claim 4, wherein a base terminal of the NPN transistor isfloating.
 7. The semiconductor ESD protection device of claim 5, whereina base terminal of the PNP transistor is floating.
 8. The semiconductorESD protection device claim 1, wherein the top contact is arranged suchthat it short circuits an emitter terminal and a base terminal of thefirst transistor.
 9. The semiconductor ESD protection device of claim 1further comprising a lateral type diode integrated with the verticallyarranged silicon control rectifier, wherein the lateral type diode andvertically arranged silicon control rectifier share a common substrate.10. The semiconductor ESD protection device of claim 9 wherein low ohmiccontact is arranged to connect an anode terminal of the lateral typediode to a cathode terminal of the silicon control rectifier.
 11. Thesemiconductor ESD protection device of claim 10, further comprising aplurality of isolation layers arranged to electrically isolate thelateral type diode from the silicon control rectifier.
 12. Thesemiconductor ESD protection device of claim 11 wherein the isolationlayers are trench isolation layers and a deep implant region.
 13. Thesemiconductor ESD protection device of claim 1, where the verticallyarranged silicon control rectifier further comprises a trigger implant.14. The semiconductor ESD protection device of claim 13, wherein thetrigger implant is provided in a base region of the first transistor andcollector region of the second transistor.
 15. A high speed datatransfer line comprising the semiconductor device of claim 1.